About this archived opportunity

Notice ID Number: NIST-SS26-CHIPS-54 Title: Notice of Intent to Sole Source to Teledyne Digital Imaging The National Institute of Standards and Technology (NIST) is seeking information from sources that may be capable of providing a coupled device detector camera system. If no alternate sources are identified, the Government intends to issue a Sole Source Award to Teledyne Digital Imaging located at 3660 Mercerville Quakerbridge Rd, Trenton, NJ 08619 under the authority of FAR 13.106-1(b); only one source reasonably available. The North American Industry Classification System (NAICS) code for this acquisition is 334516 Analytical Laboratory Instrument Manufacturing. BACKGROUND: The National Institute of Standards and Technology (NIST), Material Measurement Laboratory (MML) requires a coupled device detector camera system to perform fast OES measurements. The CHIPS RF Waveform and Rapid Frequency Comb Diagnostics for Plasma Etching Project (5.04) was undertaken to identify methods to improve efficiencies of plasma etching processes. One aspect of this project involves development and application of in situ optical diagnostics capable of characterizing plasma chemistry, including dilute species. One optical technique that meets the needs of this project is optical emission spectroscopy (OES) performed with a detector that can be controlled at a speed fast enough to follow the change in emission due to the changes in power coupled into the plasma at 13.56 megahertz. To perform fasts OES measurements, Group 646.05 needs to procure a camera with an integrated intensifier and control/data analysis software. Since dilute species will emit weak signals in (low pressure) plasma etch processes, the detector must have ultra-low noise characteristics as well as a high gain (in addition to the intensifier gain). To meet the requirements of these measurements, an intensified electron multiplication charge coupled device (IEMCCD) camera, and a control/data analysis software package are needed. General Requirements: Line Item 0001: Camera Description: The camera incorporates an electron multiplication charge coupled device (IEMCCD) sensor chip, an intensifier, a lens, and electronics used to control the camera, gate the intensifier, and digitize the sensor signal. Quantity: One (1) Technical Specifications, camera Sensor type: Back-illuminated, electron multiplication charge coupled device Intensifier diameter: 18 mm or larger Intensifier type: Gen III Intensifier minimum gating time: 1 nanosecond or less Phosphor type: P43 Maximum equivalent background illuminance at room temperature: 0.3 electrons/pixel/sec Quantum Efficiency at 400 nm: greater than or equal to 5 % Quantum Efficiency at 500 nm: greater than or equal to 20 % Quantum Efficiency at 600 nm: greater than or equal to 30 % Quantum Efficiency at 700 nm: greater than or equal to 30 % Quantum Efficiency at 750 nm: greater than or equal to 25 % Quantum Efficiency at 800 nm: greater than or equal to 25 %